Bandwidth extension of CMOS transimpedance amplifier using on-chip spiral inductor

被引：0

作者：

Hasaneen, El-Sayed A. M. ^{[1
]}

Wahab, Mohamed A. A. ^{[1
]}

Okaley, Nagwa ^{[1
]}

机构：

[1] Menia Univ, Dept Elect Engn, El Minia, Egypt

来源：

IDT 2007: SECOND INTERNATIONAL DESIGN AND TEST WORKSHOP, PROCEEDINGS | 2007年

关键词：

bandwidth extension; on-chip inductor model; transimpedance amplifier;

D O I：

暂无

中图分类号：

TP31 [计算机软件];

学科分类号：

081202 ; 0835 ;

摘要：

This paper presents bandwidth extension of differential CMOS transimpedance amplifier (TIA) using on-chip inductor techniques. On-chip spiral inductor is connected in series with the output node to enhance the bandwidth. The effects of the inductor nonidealities are included in the design. Simple and accurate inductor lumped circuit model is used in analyzes. Simulation results show that the bandwidth is increased by 47% by rising on-chip spiral inductor. Without on-chip inductor the bandwidth is 27.764 GHz and it is extended to 41.009 GHz. The total load resistance is partitioned between the inductor series resistance and an external load resistance to reduce the nonideality of the on-chip inductor and improve the bandwidth with no additional power dissipation.

引用

页码：43 / 46

页数：4

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