Label-free detection of DNA hybridization with Au/SiO2/Si diodes and poly-Si TFTs

被引:0
|
作者
Estrela, P [1 ]
Stewart, AG [1 ]
Migliorato, P [1 ]
Maeda, H [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Label-free electrical detection of DNA hybridization has been achieved by employing Au/SiO2/Si MOS diodes and Poly-Si TFTs. The detection is based on the modulation of the gate voltage associated with the increased negative charge on the gate upon hybridization. The method can be applied to other bio-reactions that result in a modification of surface dipoles.
引用
收藏
页码:1009 / 1012
页数:4
相关论文
共 50 条
  • [1] Label-free detection of DNA hybridization using a porous poly-Si ion-sensitive field effect transistor
    Mahdavi, M.
    Samaeian, A.
    Hajmirzaheydarali, M.
    Shahmohammadi, M.
    Mohajerzadeh, S.
    Malboobi, M. A.
    RSC ADVANCES, 2014, 4 (69): : 36854 - 36863
  • [2] THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER
    CHAO, TS
    LEE, CL
    LEI, TF
    ELECTRONICS LETTERS, 1993, 29 (13) : 1157 - 1159
  • [3] Thermally induced Si(100)/SiO2 interface degradation in poly-Si/SiO2/Si structures
    Afanas'ev, VV
    Stesmans, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (05) : G279 - G282
  • [4] Adhesion of Pt/Ti thin films on poly-Si/SiO2/Si and SiO2/Si substrates
    Kang, UB
    Kim, YH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 : S1448 - S1450
  • [5] POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT
    CHAO, TS
    LEE, CL
    LEI, TF
    YEN, YT
    ELECTRONICS LETTERS, 1992, 28 (12) : 1144 - 1145
  • [6] Irradiation effects of proton bombarded poly-Si/SiO2/Si structure
    Parizotto, R
    Boudinov, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 218 : 362 - 367
  • [7] Effect of PECVD Gate SiO2 Thickness on the Poly-Si/SiO2 Interface in Low-Temperature Polycrystalline Silicon TFTs
    Park, Jungmin
    Choi, Pyungho
    Kim, Soonkon
    Jeon, Bohyeon
    Lee, Jongyoon
    Choi, Byoungdeog
    JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, 2021, 16 (02) : 1027 - 1033
  • [8] Effect of PECVD Gate SiO2 Thickness on the Poly-Si/SiO2 Interface in Low-Temperature Polycrystalline Silicon TFTs
    Jungmin Park
    Pyungho Choi
    Soonkon Kim
    Bohyeon Jeon
    Jongyoon Lee
    Byoungdeog Choi
    Journal of Electrical Engineering & Technology, 2021, 16 : 1027 - 1033
  • [9] SEQUENTIAL DEPOSITION OF SIO2 AND POLY-SI IN ISOLATION TRENCHES
    ZIRKLE, TE
    WILSON, SR
    SUNDARAM, SL
    CALE, TS
    RAUPP, GB
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 905 - 910
  • [10] Hot carrier effect in low-temperature poly-Si TFTs with sputtered gate SiO2 films
    Uraoka, Yukiharu
    Miyashita, Makoto
    Sugawara, Yuta
    Yano, Hiroshi
    Hatayama, Tomoaki
    Fuyuki, Takashi
    Serikawa, Tadashi
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (04) : 1477 - 1481