Current status and future prospects of SiC power JFETs and ICs

被引：1
|
作者：
Zhao, Jian H. [1 ]
Sheng, Kuang [1 ]
Zhang, Yongxi [1 ]
Su, Ming [1 ]
机构：
[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2008年 / E91C卷 / 07期
关键词：
silicon carbide (SiC); junction field-effect transistor (JFET); power integrated circuits; normally off; high temperature electronics;
D O I：
10.1093/ietele/e91-c.7.1031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.
引用
收藏
页码：1031 / 1041
页数：11
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