Current status and future prospects of SiC power JFETs and ICs

被引：1

作者：

Zhao, Jian H. ^{[1
]}

Sheng, Kuang ^{[1
]}

Zhang, Yongxi ^{[1
]}

Su, Ming ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2008年 / E91C卷 / 07期

关键词：

silicon carbide (SiC); junction field-effect transistor (JFET); power integrated circuits; normally off; high temperature electronics;

D O I：

10.1093/ietele/e91-c.7.1031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.

引用

页码：1031 / 1041

页数：11

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