Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5

被引：17

作者：

Wang, Miao ^{[1
]}

Lu, Yegang ^{[1
]}

Shen, Xiang ^{[2
]}

Wang, Guoxiang ^{[2
]}

Li, Jun ^{[1
]}

Dai, Shixun ^{[2
]}

Song, Sannian ^{[3
]}

Song, Zhitang ^{[3
]}

机构：

[1] Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China

[2] Ningbo Univ, Lab Infrared Mat & Devices, Adv Technol Res Inst, Ningbo 315211, Zhejiang, Peoples R China

[3] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

CRYSTENGCOMM | 2015年 / 17卷 / 26期

基金：

中国国家自然科学基金;

关键词：

AMORPHOUS THIN-FILMS; DOPED GE2SB2TE5; TRANSITION; CRYSTALLIZATION; STABILITY; POWER;

D O I：

10.1039/c5ce00656b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper, the effect of Sb2Se on the phase change characteristics of Ge2Sb2Te5 (GST) is systemically studied for applications in phase-change random access memory (PRAM). The crystallization temperature of Sb2Se-GST increases with increasing Sb2Se content, while the archival life of the amorphous state first decreases and then increases. The phase transition from face-centered-cubic (FCC) to hexagonal (HEX) is suppressed when the Se atomic percentage is higher than 9% for Sb2Se-GST films. The wide band gap and high value of B-1/2 lead to a contrast in resistance of about five orders of magnitude between the amorphous and crystalline states. Compared with GST, Ge4Sb52Te9Se35 shows a high crystallization temperature, a wider band gap and a fast switching speed, suggesting it is a potential candidate for PRAM.

引用

页码：4871 / 4876

页数：6

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