Study on the crystallization behavior of Ge2Sb2Te5 and silicon doped Ge2Sb2Te5 films

被引：0
|
作者：
Jiang, Yifan [1 ]
Xu, Ling [1 ]
Chen, Jing [1 ]
Zhang, Rui [1 ]
Su, Weining [2 ]
Yu, Yao [2 ]
Ma, Zhongyuan [1 ]
Xu, Jun [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing, Peoples R China
来源：
ADVANCED ENGINEERING MATERIALS III, PTS 1-3 | 2013年 / 750-752卷
关键词：
GeSbTe; Si doping; crystallization behavior; resistance measurement; PHASE-CHANGE MEMORY; THIN-FILMS; TRANSITION; NITROGEN;
D O I：
10.4028/www.scientific.net/AMR.750-752.1044
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ge2Sb2Te5 thin films and Si doped Ge2Sb2Te5 thin films were deposited by electron beam evaporation method. The crystallization behaviors of the films were investigated by using the in situ resistance measurement. Through in situ resistance measurement, the increases of amorphous stability, crystallization rate and crystalline resistivity after Si doping were observed. The promoted nucleation process and the retardation of crystal growth were found in Si doped samples through the calculation of JMAK equation.
引用
收藏
页码：1044 / +
页数：2
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