Nonvolatile floating-gate memory programming enhancement using well bias

被引：0
|
作者：
Makwana, JJ [1 ]
Schroder, DK
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 02期
关键词：
electron injection; flash nonvolatile memory; ohmic; programming speed; Schottky; well bias;
D O I：
10.1109/TED.2005.861723
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A nonvolatile memory programming approach using ohmic and Schottky well bias contacts is proposed. Programming efficiency using positive and negative bias voltages are compared in addition to electric field differences between the biases and type of contacts using experimental data and simulations. High-injection efficiency of electrons to the floating-gate is achieved using a negatively biased Schottky contact and a positively biased ohmic contact. A low-injection efficiency is achieved using a negatively biased ohmic contact and a positively biased Schottky contact. Index Terms-Electron injection, Flash, nonvolatile memory, ohmic, programming speed, Schottky, well bias.
引用
收藏
页码：258 / 262
页数：5
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