A Novel Double Floating-Gate Unified Memory Device

被引：0

作者：

Di Spigna, Neil ^{[1
]}

Schinke, Daniel ^{[1
]}

Jayanti, Srikant ^{[1
]}

Misra, Veena ^{[1
]}

Franzon, Paul ^{[1
]}

机构：

[1] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

2012 IEEE/IFIP 20TH INTERNATIONAL CONFERENCE ON VLSI AND SYSTEM-ON-CHIP (VLSI-SOC) | 2012年

基金：

美国国家科学基金会;

关键词：

memory; nonvolatile; dynamic; volatile; unified; floating-gate; FLASH; DRAM; high-k dielectric;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel double floating-gate unified memory device is experimentally demonstrated for the first time. The device can be used to store both volatile and nonvolatile memory states simultaneously. Simulations of scaled devices show that the device offers several advantages compared to conventional memory devices. Such a device could have a dramatic impact on next generation memory architectures.

引用

页码：53 / 58

页数：6

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