A C-switch cell for low-voltage and high-density SRAM's

被引：24

作者：

Kuriyama, H ^{[1
]}

Ishigaki, Y ^{[1
]}

Fujii, Y ^{[1
]}

Maegawa, S ^{[1
]}

Maeda, S ^{[1
]}

Miyamoto, S ^{[1
]}

Tsutsumi, K ^{[1
]}

Miyoshi, H ^{[1
]}

Yasuoka, A ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, ULSI Lab, Itami, Hyogo 6648641, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 12期

关键词：

D O I：

10.1109/16.735725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel static random access memory (SRAM) cell named complementary-switch (C-Switch) cell. The proposed SRAM cell features: 1) C-Switch in which an bn-channel bulk transistor and a p-channel TFT are combined in parallel; 2) single-bit-line architecture; 3) gate-all-around TFT (GAT) with large ON-current of mu A order. With these three features, the proposed cell enjoys stability at 1.5 V and is 16% smaller in size than conventional cells. The C-Switch cell is built with only a triple poly-Si and one metal process using 0.3 mu m design rules.

引用

页码：2483 / 2488

页数：6

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