Resistive Switching in Al/Graphene Oxide/Al Structure

被引：51

作者：

Panin, Gennady N. ^{[1
,2
]}

Kapitanova, Olesya O. ^{[3
]}

Lee, Sang Wuk ^{[1
]}

Baranov, Andrey N. ^{[4
]}

Kang, Tae Won ^{[1
]}

机构：

[1] Dongguk Univ, Dept Phys, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[3] Moscow MV Lomonosov State Univ, Dept Mat Sci, Moscow 119992, Russia

[4] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119992, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 07期

关键词：

REDUCED GRAPHENE OXIDE; TRANSPARENT; FILMS;

D O I：

10.1143/JJAP.50.070110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report resistive switching behaviors in an Al/graphene oxide/Al planar structure. Graphene oxide was synthesized by a modified Hummer's method from graphite rods. The planar structures were fabricated on a Si/SiO2 substrate by spin-coating graphene oxide suspensions and patterning Al electrodes by photolithography. Both diode-like (rectifying) and resistor-like (nonrectifying) behaviors were observed in the device switching characteristics. Electrical characterization of the Al/graphene oxide interface using the induced current identified a potential barrier near the interface and its spatial modulation, caused by local changes of resistance at a bias voltage, which correlated well with the resistive switching of the whole structure. The mechanism of the observed local resistance changes near the electrode and the associated resistive switching of the entire structure is associated with the electrodiffusion of oxygen and the formation of sp(2) graphene clusters in an sp(3) insulating graphene oxide layer formed near the electrode by a pre-forming process. (C) 2011 The Japan Society of Applied Physics

引用

页数：6

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