Impedance spectroscopy analysis of the switching mechanism of reduced graphene oxide resistive switching memory

被引：19
|
作者：
Nhu Thuy Ho
Senthilkumar, V.
Kim, Yong Soo [1 ]
机构：
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
来源：
SOLID-STATE ELECTRONICS | 2014年 / 94卷
关键词：
Resistive switching memory; Graphene oxide; Thermally reduced graphene oxide; Impedance spectroscopy; ELECTRONIC-STRUCTURE; THIN-FILMS; NONVOLATILE;
D O I：
10.1016/j.sse.2014.02.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we investigated the resistive switching behavior of pristine graphene oxide and thermally reduced GO. Impedance spectroscopy and current-voltage analysis were used to verify the possible physical mechanism of the switching operation. Our observations demonstrated that, the switching operation originates from the oxidation/reduction at the top interface of Al electrode and oxygen migration inside the active layer. Reversible redox reaction Al+1 + xO (2) <-> AlOx is ground for the conduction electrons. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：61 / 65
页数：5
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