Enhanced Resistive switching Phenomena Using Al/Ti/TiOx/HfOx/Pt Bilayer structure

被引：1
|
作者：
Sarkar, Pranab Kumar [1 ]
Roy, Asim [1 ]
机构：
[1] Natl Inst Technol Silchar, Dept Phys, Silchar 788010, Assam, India
来源：
PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS) | 2015年 / 1665卷
关键词：
Filament; resistive switching random access memory (RRAM); TiOx; HfOx; LOW-POWER;
D O I：
10.1063/1.4917965
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An improvement in the switching performance is reported in a CMOS compatible Al/Ti/TiOx/HfOx/Pt memory cell, due to oxygen-rich HfOx layer insertion in simple metal-insulator-metal sandwich structure. TiOx and HfOx embedded in resistive-switching random access memory (RRAM) stack is one of the promising candidates for low power (>2V) bipolar resistive switching memory application. From I-V characteristics, trap-controlled space charge limited current (TC-SCLC) conduction mechanism is found to be the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. This device has shown good uniformity and data retention of>10(4) s at 85 degrees C with a high resistance ratio of >10(2).
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页数：3
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