Organic/Inorganic Hybrid p-n Junction with PEDOT Nanoparticles for Light-Emitting Diode

被引：2

作者：

Kim, M. S. ^{[1
]}

Jin, S. M. ^{[1
]}

Cho, M. Y. ^{[1
]}

Choi, H. Y. ^{[1
]}

Kim, G. S. ^{[1
]}

Jeon, S. M. ^{[1
]}

Yim, K. G. ^{[1
]}

Kim, H. G. ^{[1
]}

Shim, K. B. ^{[1
]}

Kang, B. K. ^{[1
]}

Kim, Y. ^{[1
]}

Lee, D. Y. ^{[2
]}

Kim, J. S. ^{[3
,4
]}

Leem, J. Y. ^{[1
]}

机构：

[1] Inje Univ, Dept Nano Syst Engn, Ctr Nano Mfg, Gimhae 621749, South Korea

[2] Samsung LED Co Ltd, Epi Mfg Technol, Suwon 443373, South Korea

[3] Chonbuk Natl Univ, Div Adv Mat Engn, Jeonju 561756, South Korea

[4] Yeungnam Univ, Dept Phys, Gyongsan 712749, South Korea

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Gallium nitride; Metal-organic chemical vapor deposition; PEDOT:PSS; PEDOT nanoparticle; Current-voltage; heterojunction;

D O I：

10.1063/1.3666642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene): beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 x 10(19) cm(-3) was grown by metal-organic chemical vapor deposition (MOCVD). The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height of the hybrid structure were obtained as 5.6 and 0.41 eV, respectively. The value of ideality factor is decreased by inserting the PEDOT nanoparticle interface layer.

引用

页数：2

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