Organic/Inorganic Hybrid p-n Junction with PEDOT Nanoparticles for Light-Emitting Diode

A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene): beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 x 10(19) cm(-3) was grown by metal-organic chemical vapor deposition (MOCVD). The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height of the hybrid structure were obtained as 5.6 and 0.41 eV, respectively. The value of ideality factor is decreased by inserting the PEDOT nanoparticle interface layer.