Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell non-volatile memory applications

被引：37

作者：

Chen, Wenbo ^{[1
]}

Lu, Wenchao ^{[1
]}

Long, Branden ^{[1
]}

Li, Yibo ^{[1
]}

Gilmer, David ^{[2
]}

Bersuker, Gennadi ^{[2
]}

Bhunia, Swarup ^{[3
]}

Jha, Rashmi ^{[1
]}

机构：

[1] Univ Toledo, Dept Elect Engn & Comp Sci, Toledo, OH 43606 USA

[2] SEMATECH, Albany, NY 12203 USA

[3] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 07期

基金：

美国国家科学基金会;

关键词：

nonvolatile memories; resistive random access memory; ReRAM; multi-level cell; access energy; endurance; oxide;

D O I：

10.1088/0268-1242/30/7/075002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report multi-level cell (MLC) switching characteristics of resistive random access memory devices with a W/Zr/HfO2/TiN stack. A multi-step forming technique was implemented in this work which efficiently suppressed the forming current overshoot and allowed device switching at a low set/reset voltage and current. Four distinct resistance states, achieved by controlling the reset stop voltages, showed excellent endurance. Write/read/erase energy values for different states were also calculated. Amongst four MLC states, it was found that the lowest resistance state of three distinct high-resistance states was prone to failing over time under constant voltage stress.

引用

页数：7

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