Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices

被引：13
|
作者：
Kannan, V. [1 ]
Rhee, J. K. [1 ]
机构：
[1] Dongguk Univ, Millimeter Wave INnovat Technol Res Ctr MINT, Seoul 100715, South Korea
来源：
PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2013年 / 15卷 / 30期
关键词：
NANOPARTICLES; NANOCRYSTALS; BISTABILITY; EMISSION; ELEMENTS; FILMS;
D O I：
10.1039/c3cp50216c
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper we report Al/CdSe-ZnS core-shell quantum dot/AlOx/CdSe-ZnS core-shell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of similar to 1000. The facile solution processed device exhibited excellent endurance characteristics for 200 000 switching cycles. Retention tests showed good stability for over 20 000 s and the devices are reproducible. A memory operating mechanism is proposed based on charge trapping-detrapping in core-shell quantum dots with AlOx acting as a barrier leading to Coulomb blockade. I-V characteristics of a three terminal device fabricated with the additional terminal wired-out from the middle AlOx layer supports the proposed charge trapping mechanism.
引用
收藏
页码：12762 / 12766
页数：5
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