Design and Analysis of a CNTFET-Based Potentiostat for Bio Medical Sensing Application

被引:0
|
作者
Ahmad, Habib Muhammad Nazir [1 ]
Jameel, Kazi Muhammad [1 ]
Islam, Mohammad Shafquatul [1 ]
Ochi, Arman Riaz [1 ]
Hafiz, Rakibul [1 ]
机构
[1] Amer Int Univ Bangladesh, Dept Elect & Elect Engn, Dhaka, Bangladesh
关键词
Carbon Nanotube Field Effect Transistor; CNTFET; CMOS; microelectrodes; potentiostat; precess variations; NITRIC-OXIDE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a new design technique of a stable, low input impedance, high sensitivity, high gain and low-power Potentiostat using carbon nanotube FETs (CNTFETs) at 32 nm level that utilizes different input voltages for verifying voltage follower performance. The fully differential architecture suppresses the common mode interference. Extensive simulations have been performed to investigate the distribution of the power and delay of the CNTFET-based Potentiostat due to variations in the supply voltage and temperature of the CNTFETs. The CNTFET-based Potentiostat demonstrates that it tolerates the PVT (Process, Voltage, and Temperature) variations significantly better than its CMOS counterpart.
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页数:4
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