Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

被引：78

作者：

Feng, Gan

Suda, Jun ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 02期

基金：

日本学术振兴会;

关键词：

Edge termination; junction termination extension (JTE); p-i-n diodes; silicon carbide (SiC); PIN-DIODES; POWER DEVICES; RECTIFIERS; THYRISTOR; GROWTH; DESIGN; DROP; KV;

D O I：

10.1109/TED.2011.2175486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An edge termination method, referred to as space-modulated junction termination extension (SMJTE) combined with a mesa structure, is presented for ultrahigh-voltage p-i-n diodes in 4H-SiC. Numerical device simulations have been performed for over 15-kV-class 4H-SiC p-i-n diodes with the proposed edge termination. The structure exhibits a high breakdown capability with an improved tolerance for the deviation of impurity dose in the JTE region. Unlike conventional multi-implantation, the proposed termination technique utilizes a single-step implantation with a single mask. A desired laterally tapered doping profile is achieved by fragmenting a conventional JTE region using relatively wide spaces. The simple process of the proposed edge termination makes it applicable to fabrication of various high-voltage devices in 4H-SiC.

引用

页码：414 / 418

页数：5

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