Improvements of NBTI Reliability in SiGe p-FETs

被引：38

作者：

Franco, J. ^{[1
]}

Kaczer, B. ^{[2
]}

Cho, M. ^{[2
]}

Eneman, G. ^{[1
,3
]}

Groeseneken, G. ^{[1
]}

Grasser, T. ^{[4
]}

机构：

[1] Katholieke Univ Leuven, ESAT Dept, Kapeldreef 75, B-3000 Louvain, Belgium

[2] IMEC, Kapeldreef 75, B-3000 Louvain, Belgium

[3] FWO Vlaanderen, Vlaanderen, Belgium

[4] Vienna Univ Technol, Inst Microelect, Christ Doppler Lab TCAD, A-1040 Vienna, Austria

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

NBTI; SiGe; Ge; Reliability; pFETs; thin EOT; high-mobility substrates; QUANTUM-WELLS; PMOSFETS; ALLOYS; GE;

D O I：

10.1109/IRPS.2010.5488668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NBTI reliability of buried SiGe channel p-FETs is investigated as a function of Ge concentration, SiGe layer thickness and Si cap thickness. Measurements show that NBTI reliability can be dramatically improved by varying these three parameters, i.e., increasing the Ge fraction, increasing the thickness of the SiGe layer, and reducing the Si cap thickness. Consequently, it is demonstrated that SiGe devices are a promising option for improving NBTI in highly-scaled sub-1nm EOT pFETs.

引用

页码：1082 / 1085

页数：4

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