Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM

被引：0

作者：

de Orio, Roberto L. ^{[1
]}

Makarov, Alexander ^{[2
]}

Selberherr, Siegfried ^{[2
]}

Goes, Wolfgang ^{[3
]}

Ender, Johannes ^{[1
]}

Fiorentini, Simone ^{[1
]}

Sverdlov, Viktor ^{[1
]}

机构：

[1] TU Wien, Christian Doppler Lab Nonvolatile Magnetoresist M, Vienna, Austria

[2] TU Wien, Inst Microelect, Vienna, Austria

[3] Silvaco Europe Ltd, Cambridge, England

来源：

49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019) | 2019年

关键词：

Spin-Orbit MRAM; perpendicular magnetization; magnetic field-free switching; two-pulse switching scheme;

D O I：

10.1109/essderc.2019.8901780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the switching of a symmetric square and an elongated rectangular perpendicular free layer by spin-orbit torque with a magnetic field-free two-pulse scheme. The switching of the layer is achieved by utilizing the in-plane shape anisotropic magnetic field. For making the switching of a symmetric square layer deterministic, an in-plane stray field created in a part of the layer is used. The combination of the shape and stray fields accelerates the switching of the free layer significantly. A switching speedup factor of 3 to 5 has been obtained. The strategy also improves the robustness of the scheme allowing fast, sub-0.5 ns switching, less sensitive to the pulses' properties.

引用

页码：146 / 149

页数：4

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