Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

被引：0

作者：

Garello, K. ^{[1
]}

Yasin, F. ^{[1
]}

Hody, H. ^{[1
]}

Couet, S. ^{[1
]}

Souriau, L. ^{[1
]}

Sharifi, S. H. ^{[1
]}

Swerts, J. ^{[1
]}

Carpenter, R. ^{[1
]}

Rao, S. ^{[1
]}

Kim, W. ^{[1
]}

Wu, J. ^{[1
]}

Sethu, K. K., V ^{[1
]}

Pak, M. ^{[1
]}

Jossart, N. ^{[1
]}

Crotti, D. ^{[1
]}

Furnemont, A. ^{[1
]}

Kar, G. S. ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

2019 SYMPOSIUM ON VLSI TECHNOLOGY | 2019年

关键词：

SPIN-ORBIT TORQUE; MAGNETIZATION;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.

引用

页码：T194 / T195

页数：2

共 26 条

[1] Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
Garello, K.
Yasin, F.
Hody, H.
Couet, S.
Souriau, L.
Sharifi, S. H.
Swerts, J.
Carpenter, R.
Rao, S.
Kim, W.
Wu, J.
Sethu, K. K. V.
Pak, M.
Jossart, N.
Crotti, D.
Furnemont, A.
Kar, G. S.
2019 SYMPOSIUM ON VLSI CIRCUITS, 2019, : T194 - T195
[2] Field-Free Magnetization Switching in SOT-MRAM Devices with Noncollinear Antiferromagnets
Pruckner, Bernhard
Jorstad, Nils Petter
Goes, Wolfgang
Selberherr, Siegfried
Sverdlov, Viktor
2024 AUSTROCHIP WORKSHOP ON MICROELECTRONICS, AUSTROCHIP 2024, 2024,
[3] Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
de Orio, R. L.
Makarov, A.
Selberherr, S.
Goes, W.
Ender, J.
Fiorentini, S.
Sverdlova, V.
SOLID-STATE ELECTRONICS, 2020, 168
[4] SOT-MRAM 300mm integration for low power and ultrafast embedded memories
Garello, K.
Yasin, F.
Couet, S.
Souriau, L.
Swerts, J.
Rao, S.
Van Beek, S.
Kim, W.
Liu, E.
Kundu, S.
Tsvetanova, D.
Jossart, N.
Croes, K.
Grimaldi, E.
Baumgartner, M.
Crotti, D.
Funiemont, A.
Gambardella, P.
Kar, G. S.
2018 IEEE SYMPOSIUM ON VLSI CIRCUITS, 2018, : 81 - 82
[5] Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM
de Orio, Roberto L.
Makarov, Alexander
Selberherr, Siegfried
Goes, Wolfgang
Ender, Johannes
Fiorentini, Simone
Sverdlov, Viktor
2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019,
[6] Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect
Pruckner, B.
Jørstad, N.
Hádamek, T.
Goes, W.
Selberherr, S.
Sverdlov, V.
2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings, 2024, : 1584 - 1589
[7] Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer
de Orio, R. L.
Makarov, A.
Goes, W.
Ender, J.
Fiorentini, S.
Sverdlov, V
PHYSICA B-CONDENSED MATTER, 2020, 578
[8] Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM
de Orio, Roberto L.
Makarov, Alexander
Selberherr, Siegfried
Goes, Wolfgang
Ender, Johannes
Fiorentini, Simone
Sverdlov, Viktor
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019), 2019, : 146 - 149
[9] Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line
Hwang, William
Xue, Fen
Song, Ming-Yuan
Hsu, Chen-Feng
Chen, T. C.
Tsai, Wilman
Bao, Xinyu
Wang, Shan X.
IEEE ELECTRON DEVICE LETTERS, 2024, 45 (10) : 1800 - 1803
[10] First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories
Cai, K.
Talmelli, G.
Fan, K.
Van Beek, S.
Kateel, V.
Gupta, M.
Monteiro, M. G.
Ben Chroud, M.
Jayakumar, G.
Trovato, A.
Rao, S.
Kar, G. S.
Couet, S.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,

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