Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

被引：0

作者：

Garello, K. ^{[1
]}

Yasin, F. ^{[1
]}

Hody, H. ^{[1
]}

Couet, S. ^{[1
]}

Souriau, L. ^{[1
]}

Sharifi, S. H. ^{[1
]}

Swerts, J. ^{[1
]}

Carpenter, R. ^{[1
]}

Rao, S. ^{[1
]}

Kim, W. ^{[1
]}

Wu, J. ^{[1
]}

Sethu, K. K., V ^{[1
]}

Pak, M. ^{[1
]}

Jossart, N. ^{[1
]}

Crotti, D. ^{[1
]}

Furnemont, A. ^{[1
]}

Kar, G. S. ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

2019 SYMPOSIUM ON VLSI TECHNOLOGY | 2019年

关键词：

SPIN-ORBIT TORQUE; MAGNETIZATION;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.

引用

页码：T194 / T195

页数：2

共 26 条

[21] Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents
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MICROMACHINES, 2021, 12 (11)
[22] Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching
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[23] Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
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[24] Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition
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[25] Field-free switching model of spin-orbit torque (SOT)-MTJ device with thermal effect based on voltage-controlled magnetic anisotropy (VCMA)
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[26] Enhanced Voltage-Controlled Magnetic Anisotropy and Field-Free Magnetization Switching Achieved with High Work Function and Opposite Spin Hall Angles in W/Pt/W SOT Tri-Layers
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