2-Terminal, High Density, and Magnetic Field Free SOT-MRAM

被引：1
|
作者：
Hwang, William [1 ]
Xue, Fen [1 ]
Tsai, Wilman [2 ]
Wang, Shan X. [1 ,2 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
来源：
2023 IEEE 34TH MAGNETIC RECORDING CONFERENCE, TMRC | 2023年
关键词：
Field-free; high-density; magnetoresistive random access memory; MRAM; spin-orbit torque; TORQUE;
D O I：
10.1109/TMRC59626.2023.10264011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The preponderance of artificial intelligence (AI) in modern society has enabled a wide range of transformative new applications in areas ranging from natural language processing to wearable health monitoring. Enhancing the performance of the memory subsystem is a key to improving the overall energy-efficiency of tomorrow's computing systems. Here we discuss a two-terminal spin-orbit torque magnetoresistive random access memory (SOT-MRAM) device which leverages a combination of spin-orbit torque (SOT) and spin-transfer torque (STT), as well as unconventional spin-orbit torque to achieve ultrahigh speed, high density and energy efficiency.
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页数：2
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