The world's first high voltage GaN-on-Diamond power semiconductor devices

被引：8

作者：

Baltynov, Turar ^{[1
]}

Unni, Vineet ^{[1
]}

Narayanan, E. M. Sankara ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

SOLID-STATE ELECTRONICS | 2016年 / 125卷

关键词：

AlGaN/GaN HEMT; GaN-on-Diamond; Circular HEMT; Breakdown voltage; Capacitance-voltage; HEMTS;

D O I：

10.1016/j.sse.2016.07.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 mu m and source field plate length of 3 mu m show an off-state breakdown voltage of similar to 1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：111 / 117

页数：7

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