Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates

被引：8
|
作者：
Mamutin, V. V. [1 ]
Egorov, A. Yu. [1 ,2 ]
Kryzhanovskaya, N. V. [2 ]
Mikhrin, V. S. [1 ]
Nadtochy, A. M. [1 ]
Pirogov, E. V. [1 ,2 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782608070105
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Studies of the properties of InGaAsN compounds and methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures grown by molecular beam epitaxy on GaAs substrates are reviewed. The results for different types of heterostructures with quantum-size InGaAsN layers are presented. Among those are (1) traditional InGaAsN quantum wells in a GaAs matrix, (2) InAs quantum dots embedded in an (In)GaAsN layer, and (3) strain-compensated superlattices InAs/GaAsN/InGaAsN with quantum wells and quantum dots. The methods used in the study allow controllable variations in the emission wavelength over the telecommunication range from 1.3 to 1.76 mu m at room temperature.
引用
收藏
页码：805 / 812
页数：8
相关论文
共 50 条
  • [31] Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates
    Aissat, A.
    Nacer, S.
    Bensebti, M.
    Vilcot, J. P.
    MICROELECTRONICS JOURNAL, 2008, 39 (01) : 63 - 66
  • [32] Enhancing 1.55 µm emission in InAs quantum dots on GaAs and InP substrates
    Sara Sabri
    Rachid Malek
    Khalil Kassmi
    Interactions, 246 (1)
  • [33] Nonradiative centers in InAs dots grown on GaAs substrates for 1.3 μm emission
    Zhao, QX
    Jacob, AP
    Willander, M
    Wang, SM
    Wei, YQ
    Ferdos, F
    Sadeghi, M
    Larsson, A
    Yang, JH
    PHYSICS LETTERS A, 2003, 315 (1-2) : 150 - 155
  • [34] Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
    D. S. Abramkin
    M. O. Petrushkov
    M. A. Putyato
    B. R. Semyagin
    T. S. Shamirzaev
    Semiconductors, 2018, 52 : 1484 - 1490
  • [35] Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
    Abramkin, D. S.
    Petrushkov, M. O.
    Putyato, M. A.
    Semyagin, B. R.
    Shamirzaev, T. S.
    SEMICONDUCTORS, 2018, 52 (11) : 1484 - 1490
  • [36] Emission-wavelength extension of nitrided InAs/GaAs quantum dots with different sizes
    Mizuno, H.
    Inoue, T.
    Kikuno, M.
    Kita, T.
    Wada, O.
    Mori, H.
    Yasuda, H.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 709 - 712
  • [37] Strain-engineered InAs/GaAs quantum dots for long-wavelength emission
    Le Ru, EC
    Howe, P
    Jones, TS
    Murray, R
    PHYSICAL REVIEW B, 2003, 67 (16):
  • [38] Long wavelength photoluminescence emission from InAs quantum dots embedded in GaAs matrix
    Saravanan, S
    Shimizu, H
    PHOTONICS: DESIGN, TECHNOLOGY, AND PACKAGING II, 2006, 6038
  • [39] Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
    Li, L. H.
    Rossetti, M.
    Patriarche, G.
    Fiore, A.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (959-962) : 959 - 962
  • [40] Thermal Stability of the Peak Emission Wavelength in Multilayer InAs/GaAs QDs Capped with a Combination Capping of InAlGaAs and GaAs
    Adhikary, S.
    Halder, N.
    Chakrabarti, S.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (05) : 4067 - 4072
12345