Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates

被引：8
|
作者：
Mamutin, V. V. [1 ]
Egorov, A. Yu. [1 ,2 ]
Kryzhanovskaya, N. V. [2 ]
Mikhrin, V. S. [1 ]
Nadtochy, A. M. [1 ]
Pirogov, E. V. [1 ,2 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782608070105
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Studies of the properties of InGaAsN compounds and methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures grown by molecular beam epitaxy on GaAs substrates are reviewed. The results for different types of heterostructures with quantum-size InGaAsN layers are presented. Among those are (1) traditional InGaAsN quantum wells in a GaAs matrix, (2) InAs quantum dots embedded in an (In)GaAsN layer, and (3) strain-compensated superlattices InAs/GaAsN/InGaAsN with quantum wells and quantum dots. The methods used in the study allow controllable variations in the emission wavelength over the telecommunication range from 1.3 to 1.76 mu m at room temperature.
引用
收藏
页码：805 / 812
页数：8
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