Cl2-based inductively coupled plasma etching of NiFe and related materials

被引：8

作者：

Jung, KB ^{[1
]}

Lambers, ES

Childress, JR

Pearton, SJ

Jenson, M

Hurst, AT

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Honeywell Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 11期

关键词：

D O I：

10.1149/1.1838908

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A parametric study of etch rates, surface quality, and mask: materials for inductively coupled plasma (ICP) dry etched NiFe, NiFeCo, TaN, and CrSi in Cl-2/Ar, Cl2N2, and Cl-2/H-2 chemistries is reported. The etch rates are a strong function of discharge composition, with maxima at similar to 66% Cl-2 in each of the chemistries investigated, as are ion flux, ion energy, and pressure. The etch mechanism appears to be formation of chlorides that are desorbed by ion assistance. If the ion-to-neutral ratio is not optimized, then the etching reverts either to a pure sputtering regime or to net deposition through formation of a thick chlorinated selvedge layer on NiFe and NiFeCo.

引用

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页码：4025 / 4028

页数：4

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