Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

被引：0
|
作者：
A. I. Okhapkin
P. A. Yunin
M. N. Drozdov
S. A. Kraev
E. V. Skorokhodov
V. I. Shashkin
机构：
[1] Institute for Physics of Microstructures,
[2] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2018年 / 52卷
关键词：
Plasma Chemical Etching; Gallium Arsenide; Capacitive Power; Etch Profile; Etch Rate;
D O I：
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学科分类号：
摘要：
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页码：1473 / 1476
页数：3
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