Etching of Gallium Arsenide in a Cl2 + H2 Plasma

被引：0
|
作者：
Efremov A.M. [1 ]
Antonov A.V. [1 ]
机构：
[1] Ivanovo State Univ. Chem. Technol., Ivanovo, 153460
来源：
Russian Microelectronics | 2001年 / 30卷 / 1期
关键词：
GaAs; Gallium; Active Surface; Etch Rate; Arsenide;
D O I：
10.1023/A:1009437821507
中图分类号：
学科分类号：
摘要：
The effect of external discharge parameters and the composition of a plasma-forming Cl2 + H2 mixture on electrophysical plasma characteristics and GaAs etching are studied. Mechanisms of volume and heterogeneous processes are considered. It is shown that high-rate cleaning of active surface centers due to ion- and radiation-stimulated desorption of interaction products is responsible for the extremum in the dependence of the etch rate on the plasma composition.
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页码：1 / 6
页数：5
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