Dry etching characteristics of AlGaN/GaN heterostructures using inductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas

被引：0
|
作者：
Wu, Tong [1 ]
Hao, Zhi-Biao [1 ]
Tang, Guang [1 ]
Luo, Yi [1 ]
机构：
[1] State Key Lab. on Integr. Optoelec., Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 3 A期
关键词：
D O I：
10.1143/jjap.42.l257
中图分类号：
学科分类号：
摘要：
16
引用
收藏
相关论文
共 50 条
  • [1] Dry etching characteristics of AlGaN/GaN heterostructures using inductively coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 plasmas
    Wu, T
    Hao, ZB
    Tang, G
    Luo, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (3A): : L257 - L259
  • [2] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
    Lee, YH
    Kim, HS
    Yeom, GY
    Lee, JW
    Yoo, MC
    Kim, TI
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1478 - 1482
  • [3] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
    Lee, Y.H.
    Kim, H.S.
    Yeom, G.Y.
    Lee, J.W.
    Yoo, M.C.
    Kim, T.I.
    [J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (3 pt 2):
  • [4] Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas
    Han, YJ
    Xue, S
    Wu, T
    Wu, Z
    Guo, WP
    Luo, Y
    Hao, ZB
    Sun, CZ
    [J]. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2004, 47 (02): : 150 - 158
  • [5] Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas
    Yanjun Han
    Song Xue
    Tong Wu
    Zhen Wu
    Wenping Guo
    Yi Luo
    Zhibiao Hao
    Changzheng Sun
    [J]. Science in China Series E: Technological Sciences, 2004, 47 : 150 - 158
  • [6] Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar
    Yang, G. F.
    Chen, P.
    Wu, Z. L.
    Yu, Z. G.
    Zhao, H.
    Liu, B.
    Hua, X. M.
    Xie, Z. L.
    Xiu, X. Q.
    Han, P.
    Shi, Y.
    Zhang, R.
    Zheng, Y. D.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2012, 23 (06) : 1224 - 1228
  • [7] Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar
    G. F. Yang
    P. Chen
    Z. L. Wu
    Z. G. Yu
    H. Zhao
    B. Liu
    X. M. Hua
    Z. L. Xie
    X. Q. Xiu
    P. Han
    Y. Shi
    R. Zhang
    Y. D. Zheng
    [J]. Journal of Materials Science: Materials in Electronics, 2012, 23 : 1224 - 1228
  • [8] Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas
    Zhou, Shengjun
    Cao, Bin
    Liu, Sheng
    [J]. APPLIED SURFACE SCIENCE, 2010, 257 (03) : 905 - 910
  • [9] Nonselective and smooth etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas
    Han, YJ
    Xue, S
    Wu, T
    Wu, Z
    Guo, WP
    Luo, Y
    Hao, ZB
    Sun, CZ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (02): : 407 - 412
  • [10] Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inuctively coupled plasmas
    HAN Yanjun
    [J]. Science China Technological Sciences, 2004, (02) : 150 - 158
12345