ZnSTe-based Schottky barrier ultraviolet detectors with nanosecond response time

被引：20

作者：

Ma, ZH ^{[1
]}

Sou, IK ^{[1
]}

Wong, KS ^{[1
]}

Yang, Z ^{[1
]}

Wong, GKL ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Kowloon, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期

关键词：

D O I：

10.1063/1.121692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSTe-based Schottky barrier photovoltaic detector arrays were fabricated on GaP(100) using a two-step molecular beam epitaxy growth approach. These detectors exhibit visible blind and ultraviolet (UV) sensitive response with a peak UV responsivity of 0.13 A/W and 1.23X10(6) V/W at 320 nm. The built-in potential of these detectors was determined to be 1.7 V. The temporal photocurrent response of a 400X400 mu m(2) detector was measured to be 1.2 ns, limited apparently by the resistance-capacitance (rc) constant of the detector structure. (C) 1998 American Institute of Physics. [S0003-6951(98)01142-5].

引用

页码：2251 / 2253

页数：3

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