ZnSTe-based Schottky barrier ultraviolet detectors with nanosecond response time

被引：20
|
作者：
Ma, ZH [1 ]
Sou, IK [1 ]
Wong, KS [1 ]
Yang, Z [1 ]
Wong, GKL [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Kowloon, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期
关键词：
D O I：
10.1063/1.121692
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnSTe-based Schottky barrier photovoltaic detector arrays were fabricated on GaP(100) using a two-step molecular beam epitaxy growth approach. These detectors exhibit visible blind and ultraviolet (UV) sensitive response with a peak UV responsivity of 0.13 A/W and 1.23X10(6) V/W at 320 nm. The built-in potential of these detectors was determined to be 1.7 V. The temporal photocurrent response of a 400X400 mu m(2) detector was measured to be 1.2 ns, limited apparently by the resistance-capacitance (rc) constant of the detector structure. (C) 1998 American Institute of Physics. [S0003-6951(98)01142-5].
引用
收藏
页码：2251 / 2253
页数：3
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