DICE: A beneficial short-channel effect in nanoscale double-gate MOSFETs

被引：1

作者：

Chouksey, Siddharth ^{[1
]}

Fossum, Jerry G. ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 03期

关键词：

drain-induced barrier lowering (DIBL); FinFET physical compact model; short-channel effects; velocity overshoot;

D O I：

10.1109/TED.2007.914835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Physics-based compact modeling, supported by numerical simulations, is used to show the significance of "drain-induced charge enhancement" (DICE) in nanoscale double-gate (DG) MOSFETs. DICE, which is the strong-inversion counterpart of drain-induced barrier lowering (DIBL), is shown to significantly benefit drive current, without affecting the gate capacitance much, and hence can improve nanoscale DG CMOS speed substantially.

引用

页码：796 / 802

页数：7

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