Effects of irradiation by low energy nitrogen ions on carbon nitride thin films

被引:0
|
作者
Nasu, Y [1 ]
Aono, M [1 ]
Aizawa, S [1 ]
Kitazawa, N [1 ]
Watanabe, Y [1 ]
机构
[1] Natl Def Acad, Dept Mat Sci & Engn, Yokosuka, Kanagawa 2398686, Japan
来源
SURFACE ENGINEERING 2002-SYNTHESIS, CHARACTERIZATION AND APPLICATIONS | 2003年 / 750卷
关键词
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Carbon nitride (CNx) thin films have been prepared by hot carbon filament chemical vapor deposition, and the nitrogen content in the films is approximately 0.05. The CNx films have been irradiated by 0.1 keV nitrogen ions to increase the nitrogen content after deposition. The nitrogen content in the CNx films was obtained with X-ray photoelectron spectroscopy. Scanning electron microscopy was employed to study microstructures of the films. The experimental results show that nitrogen ions are chemically combined with the CNx films and as a result the nitrogen content increases up to approximately 0.30. Furthermore, it is found that nitrogen ions change the film microstructures and sputter the surfaces of CNx films.
引用
收藏
页码:349 / 354
页数:6
相关论文
共 50 条
  • [31] Carbon nitride thin films obtained by laser ablation of graphite in a nitrogen plasma
    Polo, MC
    Aguiar, R
    Serra, P
    Cleries, L
    Varela, M
    Esteve, J
    APPLIED SURFACE SCIENCE, 1996, 96-8 : 870 - 873
  • [32] Nitrogen Rich Carbon Nitride Thin Films Deposited by Hybrid PLD Technique
    Jelínek, Miroslav
    Kulisch, Wilhelm
    Lančok, Ján
    Popov, Cyril
    Bulíř, Jiří
    Delplancke-Ogletree, M.P.
    Molecular Crystals and Liquid Crystals, 2002, 374 (01) : 281 - 284
  • [33] Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films
    Kulikov, D. V.
    Trushin, Yu. V.
    Kharlamov, V. S.
    TECHNICAL PHYSICS LETTERS, 2010, 36 (03) : 262 - 264
  • [34] Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films
    D. V. Kulikov
    Yu. V. Trushin
    V. S. Kharlamov
    Technical Physics Letters, 2010, 36 : 262 - 264
  • [35] LOW-TEMPERATURE SYNTHESIS OF THIN-FILMS OF CARBON NITRIDE
    KRISHNA, MG
    GUNASEKHAR, KR
    MOHAN, S
    JOURNAL OF MATERIALS RESEARCH, 1995, 10 (05) : 1083 - 1085
  • [36] The effects of nitrogen partial pressure on the microstructure of amorphous carbon nitride films
    Wu Jinxin
    Xu Feng
    Ye Peng
    Tang Xiaolong
    Zuo Dunwen
    INTEGRATED FERROELECTRICS, 2017, 180 (01) : 139 - 148
  • [37] CARBON NITRIDE FORMATION BY LOW-ENERGY NITROGEN IMPLANTATION INTO GRAPHITE
    GOUZMAN, I
    BRENER, R
    HOFFMAN, A
    THIN SOLID FILMS, 1994, 253 (1-2) : 90 - 94
  • [38] Radiation resistance of thin TiN films as a result of irradiation with low-energy Kr14+ ions
    Kozlovskiy, A. L.
    Abdigaliyev, M. B.
    Akhtanova, G.
    Zdorovets, M., V
    CERAMICS INTERNATIONAL, 2020, 46 (06) : 7970 - 7976
  • [39] Low-temperature growth of epitaxial barium titanate thin films by irradiation of low-energy positive oxygen ions
    Ishibashi, Y
    Tsurumi, T
    Ohashi, N
    Fukunaga, O
    MATERIALS SCIENCE AND ENGINEERING SERVING SOCIETY, 1998, : 139 - 142
  • [40] Highly Conductive Carbon-Based Thin Films Produced by Low-Energy Electron Irradiation
    C. C. Ciobotaru
    I. C. Ciobotaru
    D. G. Iosub
    S. Polosan
    Journal of Electronic Materials, 2021, 50 : 5529 - 5541