Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films

被引：0
|
作者：
D. V. Kulikov
Yu. V. Trushin
V. S. Kharlamov
机构：
[1] Russian Academy of Sciences,Ioffe Physical
[2] Russian Academy of Sciences,Technical Institute
来源：
Technical Physics Letters | 2010年 / 36卷
关键词：
Molecular Beam Epitaxy; Technical Physic Letter; Gallium Nitride; Molecular Beam Epitaxy Growth; Film Growth Rate;
D O I：
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学科分类号：
摘要：
The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride (GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the method of balance kinetic equations. The dependence of the GaN film growth rate on the ion energy is determined and changes in the structure of films grown at different ion energies are explained. Theoretical estimates satisfactorily agree with the available experimental data.
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页码：262 / 264
页数：2
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