Effects of irradiation by low energy nitrogen ions on carbon nitride thin films

被引:0
|
作者
Nasu, Y [1 ]
Aono, M [1 ]
Aizawa, S [1 ]
Kitazawa, N [1 ]
Watanabe, Y [1 ]
机构
[1] Natl Def Acad, Dept Mat Sci & Engn, Yokosuka, Kanagawa 2398686, Japan
来源
SURFACE ENGINEERING 2002-SYNTHESIS, CHARACTERIZATION AND APPLICATIONS | 2003年 / 750卷
关键词
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Carbon nitride (CNx) thin films have been prepared by hot carbon filament chemical vapor deposition, and the nitrogen content in the films is approximately 0.05. The CNx films have been irradiated by 0.1 keV nitrogen ions to increase the nitrogen content after deposition. The nitrogen content in the CNx films was obtained with X-ray photoelectron spectroscopy. Scanning electron microscopy was employed to study microstructures of the films. The experimental results show that nitrogen ions are chemically combined with the CNx films and as a result the nitrogen content increases up to approximately 0.30. Furthermore, it is found that nitrogen ions change the film microstructures and sputter the surfaces of CNx films.
引用
收藏
页码:349 / 354
页数:6
相关论文
共 50 条
  • [21] Influence of nitrogen ion energy on the Raman spectroscopy of carbon nitride films
    Cheng, YH
    Tay, BK
    Lau, SP
    Shi, X
    Qiao, XL
    Sun, ZH
    Chen, JG
    Wu, YP
    Xie, CS
    DIAMOND AND RELATED MATERIALS, 2001, 10 (12) : 2137 - 2144
  • [22] Postgrowth irradiation of hydrogenated amorphous carbon thin films by low-energy ion beam
    Song, K.M. (kmsong@kku.ac.kr), 1600, Japan Society of Applied Physics (43):
  • [23] X-ray photoelectron spectroscopic observation on the formation of carbon nitride thin films produced by low-energy nitrogen ion implantation
    Japan Atom. Ener. Research Institute, Naka-gun, Ibaraki 319-1195, Japan
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4540 - 4544
  • [24] X-ray photoelectron spectroscopic observation on the formation of carbon nitride thin films produced by low-energy nitrogen ion implantation
    Shimoyama, I
    Sekiguchi, T
    Baba, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B): : 4540 - 4544
  • [25] Nitrogen 1s electron binding energy assignment in carbon nitride thin films with different structures
    Deartpment of Physics, Linköping University, S-581 83 Linköping, Sweden
    不详
    不详
    J Electron Spectrosc Relat Phenom, 1 (45-49):
  • [26] Nitrogen 1s electron binding energy assignment in carbon nitride thin films with different structures
    Zheng, WT
    Xing, KZ
    Hellgren, N
    Logdlund, M
    Johansson, A
    Gelivs, U
    Salaneck, WR
    Sundgren, JE
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1997, 87 (01) : 45 - 49
  • [27] Nitrogen rich carbon nitride thin films deposited by hybrid PLD technique
    Jelínek, M
    Kulisch, W
    Lancok, J
    Popov, C
    Bulír, J
    Delplancke-Ogletree, MP
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2002, 374 : 281 - 284
  • [28] Nitrogen rich carbon nitride thin films deposited by hybrid PLD technique
    Jelínek, M
    Kulisch, W
    Lancok, J
    Popov, C
    Bulír, J
    Delplancke-Ogletree, MP
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2002, 374 : 207 - 210
  • [29] Pulsed laser deposition of carbon nitride thin films in nitrogen gas ambient
    Okoshi, M
    Kumagai, H
    Toyoda, K
    JOURNAL OF MATERIALS RESEARCH, 1997, 12 (12) : 3376 - 3379
  • [30] Pulsed laser deposition of carbon nitride thin films in nitrogen gas ambient
    Masayuki Okoshi
    Hiroshi Kumagai
    Koichi Toyoda
    Journal of Materials Research, 1997, 12 : 3376 - 3379