Hyperspectral Imaging Reflectometry for 3D Semiconductor Metrology

被引：0
|
作者：
Kim, Jinseob [1 ]
Park, Gwangsik [1 ]
Han, Daehoon [1 ]
Kim, Wookrae [1 ]
Lee, Myungjun [1 ]
机构：
[1] Samsung Elect Co Ltd, Mechatron R&D Ctr, Metrol Inspect Equipment R&D Team, Hwaseong Si 18448, Gyeonggi Do, South Korea
来源：
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the hyperspectral imaging reflectometry technique for the critical dimension measurement of the advanced semiconductor devices. The proposed line scan based broadband system can enable high speed & non-destructive 3D measurements with great precision. (c) 2021 The Author(s)
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页数：2
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