3D analysis of semiconductor devices: A combination of 3D imaging and 3D elemental analysis

被引：1
|
作者：
Fu, Bianzhu [1 ]
Gribelyuk, Michael A. [2 ]
机构：
[1] GLOBALFOUNDRIES, Ctr Complex Anal, 400 Stone Break Rd Extens, Malta, NY 12020 USA
[2] GLOBALFOUNDRIES, Adv Technol Dev, 400 Stone Break Rd Extens, Malta, NY 12020 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2018年 / 123卷 / 16期
关键词：
TOMOGRAPHY;
D O I：
10.1063/1.5010186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
3D analysis of semiconductor devices using a combination of scanning transmission electron microscopy (STEM) Z-contrast tomography and energy dispersive spectroscopy (EDS) elemental tomography is presented. 3D STEM Z-contrast tomography is useful in revealing the depth information of the sample. However, it suffers from contrast problems between materials with similar atomic numbers. Examples of EDS elemental tomography are presented using an automated EDS tomography system with batch data processing, which greatly reduces the data collection and processing time. 3D EDS elemental tomography reveals more in-depth information about the defect origin in semiconductor failure analysis. The influence of detector shadowing and X-rays absorption on the EDS tomography's result is also discussed. Published by AIP Publishing.
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页数：6
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