Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition

被引：37
|
作者：
Fujiwara, H
Danno, K
Kimoto, T
Tojo, T
Matsunami, H
机构：
[1] Dept Tech & Dev, Kagawa 7691612, Japan
[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 2-4期
关键词：
doping; chemical vapor deposition; vapor phase epitaxy; semiconducting silicon compounds;
D O I：
10.1016/j.jcrysgro.2005.03.093
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The C/Si ratio dependence of growth rate, surface morphology, micropipe closing ratio, doping concentration and deep-level concentration have been investigated in fast epitaxial growth of 4H-SiC (0 0 0 1) epilayers by chemical vapor deposition in a vertical hot-wall reactor. The doping, Z(1/2) and EH6/7 centers concentrations of thick epilayers decrease with increasing C/Si ratio of source gases. By adjusting the C/Si ratio at 0.7, specular surface morphology with a low doping concentration of 1 x 10(13) cm(-3) has been obtained at a growth rate of 33 mu m/h, and the concentrations Of Z1/2 and EH6/7 centers have been kept low, 8 x 10(12) and 4 x 10(12) cm(-3), respectively. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：370 / 376
页数：7
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