Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(112¯0) and (033¯8)

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[1] Kimoto, Tsunenobu
[2] Hashimoto, Kouichi
[3] Matsunami, Hiroyuki
来源：
Kimoto, T. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
Annealing - Chemical vapor deposition - Crystal growth - Deep level transient spectroscopy - Epitaxial growth - Fabrication - MOS devices - MOSFET devices - Recrystallization (metallurgy) - Surface roughness;
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摘要：
Homoepitaxial growth of 4H-SiC(112¯0) and (033¯8) by hot-wall chemical vapor deposition has been investigated. Both, the residual-donor concentration and deep-level concentrations can be reduced by increasing the C/Si ratio during growth. The optimum C/Si ratio for obtaining high-quality epilayers with good morphology is higher on the non-basal planes than on off-axis (0001). The correlation between deep levels and growth condition is discussed.
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