Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition

被引：37

作者：

Fujiwara, H

Danno, K

Kimoto, T

Tojo, T

Matsunami, H

机构：

[1] Dept Tech & Dev, Kagawa 7691612, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 2-4期

关键词：

doping; chemical vapor deposition; vapor phase epitaxy; semiconducting silicon compounds;

D O I：

10.1016/j.jcrysgro.2005.03.093

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The C/Si ratio dependence of growth rate, surface morphology, micropipe closing ratio, doping concentration and deep-level concentration have been investigated in fast epitaxial growth of 4H-SiC (0 0 0 1) epilayers by chemical vapor deposition in a vertical hot-wall reactor. The doping, Z(1/2) and EH6/7 centers concentrations of thick epilayers decrease with increasing C/Si ratio of source gases. By adjusting the C/Si ratio at 0.7, specular surface morphology with a low doping concentration of 1 x 10(13) cm(-3) has been obtained at a growth rate of 33 mu m/h, and the concentrations Of Z1/2 and EH6/7 centers have been kept low, 8 x 10(12) and 4 x 10(12) cm(-3), respectively. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：370 / 376

页数：7

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