Bipolar issues in advanced power BiCMOS technology

被引：2

作者：

Efland, T ^{[1
]}

Devore, J ^{[1
]}

Hastings, A ^{[1
]}

Pendharkar, S ^{[1
]}

Teggatz, R ^{[1
]}

机构：

[1] Texas Instruments Inc, Mixed Signal Analog Technol Dev, Dallas, TX 75265 USA

来源：

PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2000年

关键词：

D O I：

10.1109/BIPOL.2000.886166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Technology is driven by the evolving CMOS roadmap, and as a consequence, it is increasingly difficult to integrate good performing bipolar devices without unduly increasing process complexity. Designers want and need good NPNs for key circuits; a Table of some of these is outlined. Bipolar device needs and the difficulties of device performance vs, integration are described for typical advanced power BICMOS technology with respect to design concerns. Other bipolar issues relating to guard-ring, parasitic, and ESD concerns are also briefly discussed.

引用

页码：20 / 27

页数：8

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