Effects of finger width on large-area InGaAs MSM photodetectors

被引:12
|
作者
Yuang, RH
Chyi, JI
机构
[1] Department of Electrical Engineering, National Central University, Chung-Li
关键词
metal-semiconductor-metal structures; photodetectors;
D O I
10.1049/el:19960085
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors show that the capacitance of the metal-semiconductor-metal photodetector call be minimised by using a very small or large finger width, with emphasis on the application for the large-area detector. Taking the quantum efficiency into account, the optimum sensitivity of the detector is obtained for the MSM-PD with very slim fingers.
引用
收藏
页码:131 / 132
页数:2
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