Effects of finger width on large-area InGaAs MSM photodetectors

被引：12
|
作者：
Yuang, RH
Chyi, JI
机构：
[1] Department of Electrical Engineering, National Central University, Chung-Li
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 02期
关键词：
metal-semiconductor-metal structures; photodetectors;
D O I：
10.1049/el:19960085
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors show that the capacitance of the metal-semiconductor-metal photodetector call be minimised by using a very small or large finger width, with emphasis on the application for the large-area detector. Taking the quantum efficiency into account, the optimum sensitivity of the detector is obtained for the MSM-PD with very slim fingers.
引用
收藏
页码：131 / 132
页数：2
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