GeSn Film Deposition using Metal Organic Chemical Vapor Deposition

被引：15
|
作者：
Suda, K. [1 ]
Uno, T. [1 ]
Miyakawa, T. [1 ]
Machida, H. [2 ]
Ishikawa, M. [2 ]
Sudo, H. [2 ]
Ohshita, Y. [3 ]
Ogura, A. [1 ]
机构：
[1] Meiji Univ, Sch Sci & Technol, Tama Ku, Kawasaki, Kanagawa 2148571, Japan
[2] Gas Phase Growth Ltd, Koganei, Tokyo 1840012, Japan
[3] Toyota Technol Inst, Tenpa Ku, Nagoya, Aichi 4688511, Japan
来源：
GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5 | 2013年 / 53卷 / 01期
关键词：
GROWTH;
D O I：
10.1149/05301.0245ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An approach of creating CMOS channel with GeSn is one of the post-scaling techniques and is widely considered to be promising to improve LSI performance. In this paper, we selected the metalorganic (MO) precursors to deposit GeSn and investigated their characteristics. We confirmed that it is possible to deposit GeSn on a substrate using the MOCVD technique.
引用
下载
收藏
页码：245 / 250
页数：6
相关论文
共 50 条
  • [1] Metal film deposition by laser breakdown chemical vapor deposition
    Jervis, T. R.
    Newkirk, L. R.
    JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) : 420 - 424
  • [2] Metal organic chemical vapor deposition of ZnO
    Fenwick, William E.
    Woods, Vincent T.
    Pan, Ming
    Li, Nola
    Kane, Matthew H.
    Gupta, Shalini
    Rengarajan, Varatharajan
    Nause, Jeff
    Ferguson, Ian T.
    GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 451 - +
  • [3] Metal organic chemical vapor deposition of ZnO
    Fenwick, William E.
    Woods, Vincent T.
    Pan, Ming
    Li, Nola
    Kane, Matthew H.
    Gupta, Shalini
    Rengarajan, Varatharajan
    Nause, Jeff
    Ferguson, Ian T.
    PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 393 - +
  • [4] CALCULATION OF THE DEPOSITION RATE FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD)
    Soroosh, Mohammad
    2008 3RD INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGIES: FROM THEORY TO APPLICATIONS, VOLS 1-5, 2008, : 649 - 651
  • [5] ZnO thin film grown by metal-organic chemical vapor deposition
    Du, GT
    Wang, XQ
    Yang, SR
    Yang, XT
    Wang, JZ
    Zhang, YT
    Liu, D
    Ma, Y
    Liu, DL
    Ong, HC
    FRONTIERS OF SOLID STATE CHEMISTRY, 2002, : 383 - 389
  • [6] Ge film growth in the presence of Sb by metal organic chemical vapor deposition
    Kim, Ran-Young
    Kim, Ho-Gi
    Yoon, Soon-Gil
    Journal of Applied Physics, 2007, 102 (08):
  • [7] Polycrystalline CdS thin film prepared by metal organic chemical vapor deposition
    Uda, H
    Fujii, T
    Ikegami, S
    Sonomura, H
    CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 523 - 526
  • [8] Ge film growth in the presence of Sb by metal organic chemical vapor deposition
    Kim, Ran-Young
    Kim, Ho-Gi
    Yoon, Soon-Gil
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
  • [9] Y-Ba-Cu-O film deposition by metal organic chemical vapor deposition on buffered metal substrates
    Selvamanickam, V
    Galinski, G
    DeFrank, J
    Trautwein, C
    Haldar, P
    Balachandran, U
    Lanagan, M
    Chudzik, M
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1999, 9 (02) : 1523 - 1526
  • [10] Temperature effect on ZnO/Si thin film grown using metal organic chemical vapor deposition
    Kim, KS
    Lee, JH
    Kim, HW
    METALS AND MATERIALS INTERNATIONAL, 2002, 8 (06): : 601 - 605
12345