GeSn Film Deposition using Metal Organic Chemical Vapor Deposition

被引：15
|
作者：
Suda, K. [1 ]
Uno, T. [1 ]
Miyakawa, T. [1 ]
Machida, H. [2 ]
Ishikawa, M. [2 ]
Sudo, H. [2 ]
Ohshita, Y. [3 ]
Ogura, A. [1 ]
机构：
[1] Meiji Univ, Sch Sci & Technol, Tama Ku, Kawasaki, Kanagawa 2148571, Japan
[2] Gas Phase Growth Ltd, Koganei, Tokyo 1840012, Japan
[3] Toyota Technol Inst, Tenpa Ku, Nagoya, Aichi 4688511, Japan
来源：
GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5 | 2013年 / 53卷 / 01期
关键词：
GROWTH;
D O I：
10.1149/05301.0245ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An approach of creating CMOS channel with GeSn is one of the post-scaling techniques and is widely considered to be promising to improve LSI performance. In this paper, we selected the metalorganic (MO) precursors to deposit GeSn and investigated their characteristics. We confirmed that it is possible to deposit GeSn on a substrate using the MOCVD technique.
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页码：245 / 250
页数：6
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