ZnO thin film grown by metal-organic chemical vapor deposition

被引：2
|
作者：
Du, GT [1 ]
Wang, XQ [1 ]
Yang, SR [1 ]
Yang, XT [1 ]
Wang, JZ [1 ]
Zhang, YT [1 ]
Liu, D [1 ]
Ma, Y [1 ]
Liu, DL [1 ]
Ong, HC [1 ]
机构：
[1] Jilin Univ, Coll Elect Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
来源：
FRONTIERS OF SOLID STATE CHEMISTRY | 2002年
关键词：
D O I：
10.1142/9789812776846_0052
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
High quality ZnO films were deposited on c-Al2O3 substrate by metal-organic chemical vapor deposition. X-ray diffraction indicated that ZnO films were strongly c-oriented. Strong ultraviolet (UV) emission was observed with center peak at 3.29 eV. The full width at half maximum of UV emission was 99 meV The deep level emission was too weak to be observed. Transmission spectrum indicated that ZnO film was highly transparent in visible range with an abrupt absorption edge in UV region. The calculated band-gap energy from transmission spectrum coincided with that of ZnO bulk well. Raman spectrum showed that ZnO film could be classified as high quality epitaxial layers of haxagonal ZnO. Optical pumped UV lasing was obtained at room temperature. The threshold was as low as 0.24 mu J with pumped beam diameter of 20 mu m.
引用
收藏
页码：383 / 389
页数：7
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