Metal organic chemical vapor deposition of ZnO

被引：0
|
作者：
Fenwick, William E. [1 ]
Woods, Vincent T. [1 ]
Pan, Ming [1 ,2 ]
Li, Nola [1 ]
Kane, Matthew H. [1 ,3 ]
Gupta, Shalini [1 ]
Rengarajan, Varatharajan [2 ]
Nause, Jeff [2 ]
Ferguson, Ian T. [1 ,3 ]
机构：
[1] Georgia Inst Technol, Sch ECE, Atlanta, GA 30332 USA
[2] Cermet Inc, Atlanta, GA 30318 USA
[3] Georgia Inst Technol, Sch MSE, Atlanta, GA 30332 USA
来源：
PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2006年 / 891卷
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of ZnO were grown by metal organic chemical vapor deposition (MOCVD) in a vertical injection rotating disk reactor (RDR) system on sapphire substrates. Mrietics of ZnO growth by MOCVD were studied and an optimal growth window for a RDR tool was determined. Experimental growth conditions were chosen based on calculations of Reynolds Number (Re) and mixed convection parameter in order to select a growth window with stable gas flow and uniform heat transfer. Growth parameters were systemically varied within this window to determine the optimal growth conditions for this MOCVD tool and to study how these parameters affect film growth and quality. Properties of ZnNiO films grown by MOCVD were also studied to determine the effects of Ni incorporation on structural, optical, and magnetic properties.
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页码：393 / +
页数：2
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