Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation

被引：0
|
作者：
Dannefaer, S [1 ]
Avalos, V
Syväjärvi, M
Yakimova, R
机构：
[1] Univ Winnipeg, Dept Phys, Winnipeg, MB R3B 2E9, Canada
[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷
关键词：
epilayer; positron annihilation; SiC; vacancies;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epilayers of 4H-SiC were investigated by positron annihilation spectroscopies: four epilayers and their substrates were investigated. The epilayers (47 to 220 mum thick) contained significantly lower grown-in vacancy concentration than did their substrates, and there was no dependency on layer thickness. Upon electron irradiation silicon vacancies were introduced at the same rate in epilayer and in substrate.
引用
收藏
页码：173 / 176
页数：4
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