Recombination centers in as-grown and electron-irradiated ZnO substrates

被引：17
|
作者：
Son, N. T. [1 ]
Ivanov, I. G.
Kuznetsov, A.
Svensson, B. G.
Zhao, Q. X.
Willander, M.
Morishita, N.
Ohshima, T.
Itoh, H.
Isoya, J.
Janzen, E.
Yakimova, R.
机构：
[1] Linkoping Univ, Dept Phys Chem Biol, S-58183 Linkoping, Sweden
[2] Univ Oslo, Ctr Mat Sci & Technol, Dept Phys, NO-0316 Oslo, Norway
[3] Linkoping Univ, Dept Sci & Technol, Norrkoping, Sweden
[4] Japan Atom Energy Agcy, Gunma 3701292, Japan
[5] Univ Tsukuba, Tsukuba, Ibaraki 3058550, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 09期
关键词：
D O I：
10.1063/1.2802186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical detection of magnetic resonance (ODMR) was used to study defects in ZnO substrates irradiated with 3 MeV electrons at room temperature. The Zn vacancy and some other ODMR centers were detected. Among these, the Zn vacancy and two other centers, labeled as LU3 and LU4, were also commonly observed in different types of as-grown ZnO substrates. The LU3 and LU4 are related to intrinsic defects and act as dominating recombination centers in irradiated and as-grown ZnO. (C) 2007 American Institute of Physics.
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页数：5
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